Autor: |
Zhiyi Lu, Zhenjie Guo, Wanrong Zhang, Chunbao Ding, Yujie Zhang, Hongyun Xie, Guanghui Xing |
Rok vydání: |
2012 |
Předmět: |
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Zdroj: |
2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT). |
DOI: |
10.1109/icmmt.2012.6230446 |
Popis: |
To solve the existing problems such as lower quality factor and inductance value in common active inductor, a novel cascode-grounded active inductor circuit topology was proposed. The R f is added and the RC feedback cascode positive feedback is formed used to substantially improve equivalent inductance and quality-factor. This novel active inductor was implemented by using a TSMC 0.35-μm 3P4M SiGe BiCMOS technology, which demonstrates a maximum quality factor of 2563 with an inductance of 3.165nH at 4.3GHz. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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