Real time in-situ thickness control of Fabry—Perot cavities in MBE by 44 and 88 wavelength ellipsometry

Autor: B. Johs, M.D. Boonzaayer, C.-H. Kuo, G.N. Maracas, D.K. Schroder, M.F. DeHerrera
Rok vydání: 1997
Předmět:
Zdroj: Journal of Crystal Growth. :281-285
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(96)01233-x
Popis: We have demonstrated how to use the 44 wavelength ellipsometer for in-situ closed-loop feedback control of a molecular beam epitaxy in order to grow reproducible AlAs GaAs Fabry—Perot cavities. Sample-to-sample reproducibility of the Fabry—Perot cavity mode position measured using normal incident reflection was better than 0.2% among six samples grown at different times and different growth conditions. This shows that a reproducible control of AlAs GaAs layer thickness is achievable using the 44 wavelength ellipsometer. The new 88 wavelength ellipsometer includes UV wavelengths from 2770 to 4150 A. The closed-loop in-situ control of Fabry—Perot cavity growth will be explained and the results from the two types of ellipsometers will be compared.
Databáze: OpenAIRE