Autor: |
B. Johs, M.D. Boonzaayer, C.-H. Kuo, G.N. Maracas, D.K. Schroder, M.F. DeHerrera |
Rok vydání: |
1997 |
Předmět: |
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Zdroj: |
Journal of Crystal Growth. :281-285 |
ISSN: |
0022-0248 |
DOI: |
10.1016/s0022-0248(96)01233-x |
Popis: |
We have demonstrated how to use the 44 wavelength ellipsometer for in-situ closed-loop feedback control of a molecular beam epitaxy in order to grow reproducible AlAs GaAs Fabry—Perot cavities. Sample-to-sample reproducibility of the Fabry—Perot cavity mode position measured using normal incident reflection was better than 0.2% among six samples grown at different times and different growth conditions. This shows that a reproducible control of AlAs GaAs layer thickness is achievable using the 44 wavelength ellipsometer. The new 88 wavelength ellipsometer includes UV wavelengths from 2770 to 4150 A. The closed-loop in-situ control of Fabry—Perot cavity growth will be explained and the results from the two types of ellipsometers will be compared. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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