Reduced parasitic contact resistance and highly stable operation in a-In-Ga-Zn-O thin-film transistors with microwave treatment
| Autor: | Guang Ting Zheng, Yao Jen Lee, Meng-Chyi Wu, Chur Shyang Fuh, Li Feng Teng, Chih Hsiang Chang, Po-Tsun Liu |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Contact resistance Transistor Metals and Alloys 02 engineering and technology Surfaces and Interfaces Trapping 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid law.invention law Thin-film transistor 0103 physical sciences Materials Chemistry Optoelectronics Thin film 0210 nano-technology business Layer (electronics) Microwave |
| Zdroj: | Thin Solid Films. 619:148-152 |
| ISSN: | 0040-6090 |
| Popis: | In this work, we studied the effects of microwave annealing process on amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) and demonstrated a high performance and reliable device characteristics. The characteristic trapping time ( τ ) derived from stretched-exponential model was extracted to exhibit the quality improvement of a-IGZO thin film. The microwave annealing features a selective heating and potentially avoids the damage to materials neighboring the a-IGZO channel layer in TFT device structure during thermal processes, resulting in lower parasitic source to drain resistance. |
| Databáze: | OpenAIRE |
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