Study on Sensing Properties of Ion-Sensitive Field-Effect-Transistors Fabricated With Stack Sensing Membranes
| Autor: | Henry J. H. Chen, Tzu Nien Lee, Kuang Chien Hsieh |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Oxide Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials chemistry.chemical_compound Hysteresis Membrane chemistry Stack (abstract data type) 0103 physical sciences Field-effect transistor Sensitivity (control systems) Electrical and Electronic Engineering 0210 nano-technology Layer (electronics) Biosensor |
| Zdroj: | IEEE Electron Device Letters. 37:1642-1645 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2016.2619714 |
| Popis: | This letter addresses the characteristics of biosensor made of ion-sensitive field-effect-transistors (ISFETs) with stacked 3-aminopropyltriethoxysilane/SiO2 sensing membranes. These devices exhibit higher sensitivity, lower hysteresis, and lower drift characteristics as compared with the conventional ones made with a simple layer of oxide. Much improved performance makes ISFETs a favorable choice for future bio-sensing applications. |
| Databáze: | OpenAIRE |
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