Analytical 2D modeling for potential distribution and threshold voltage of the short channel fully depleted cylindrical/surrounding gate MOSFET

Autor:	Abdellah Aouaj, A. Nouacry, A. Bouziane
Rok vydání:	2005
Předmět:	Physics Evanescent wave Mechanics Poisson distribution Threshold voltage symbols.namesake Distribution (mathematics) MOSFET Electronic engineering symbols Evanescent mode Electrical and Electronic Engineering Poisson's equation Communication channel
Zdroj:	International Journal of Electronics. 92:437-443
ISSN:	1362-3060 0020-7217
DOI:	10.1080/08827510412331314412
Popis:	A two-dimensional analytical model for fully depleted cylindrical/surrounding gate MOSFET is presented. We used the evanescent mode analysis to solve the 2D Poisson's equation and to deduce analytically the surface potential and threshold voltage expressions of this device. Comparison with the other models reveals a good agreement.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3950af93161bf17edd2664a46e8b305f https://doi.org/10.1080/08827510412331314412 Zobrazit plný text záznamu