Diffusion length variation in photovoltaic cells with Bridgman-grown CuInSe2 substrates
| Autor: | Clifford H. Champness |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Chemistry
business.industry Scattering Metals and Alloys Analytical chemistry Surfaces and Interfaces Trapping Capacitance Surfaces Coatings and Films Electronic Optical and Magnetic Materials Wavelength Optics Impurity Materials Chemistry Diffusion (business) Penetration depth business Order of magnitude |
| Zdroj: | Thin Solid Films. 515:6200-6203 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/j.tsf.2006.12.067 |
| Popis: | In a group of CuInSe 2 -CdS-ZnO photovoltaic cells, where the absorber was a layer cut from Bridgman-grown p-type CuInSe 2 ingots, electron diffusion lengths at room temperature ( L n ) were estimated by the photocurrent–capacitance method. Dark capacitance measurements were also made on the same cells against reverse bias and from Mott-Schottky plots, slope concentrations p MS were determined at a reverse bias of 1.5 V. In a plot of L n against p MS , it was found that, despite much scatter in the experimental points, there was an apparent trend of L n decreasing by about an order of magnitude with increase of p MS from 10 16 to 10 17 cm − 3 . Detailed proposals were then made to explain this trend. These were reduction of lifetime via Shockley-Read trapping with mobility decrease by impurity scattering, shunt resistance lowering by light and optical penetration depth reduction at shorter illumination wavelengths. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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