13.1 A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology

Autor: J. Zhou, Teruo Takagiwa, Toshifumi Hashimoto, Y. Ochi, Toshiki Hisada, Mario Sako, Takahiro Yamashita, M. Uda, Takatoshi Minamoto, Hiroshi Sugawara, T. Kawabe, Noboru Shibata, N. Raghunathan, Junichi Sato, Koji Hosono, Osamu Nagao, T. Ogawa, Naoki Kobayashi, T. Someya, Shuo Chen, Ryo Fukuda, Koichi Kawakami, H. Date, Makoto Miakashi, Y. Matsumoto, Takahiro Shimizu, M. Sato, J. Nakai, Naohito Morozumi, M. Ogawa, Tomoharu Hashiguchi, Tomohiro Sugimoto, H. Takamoto, T. Nakano, T. Nakagawa, Masami Masuda, T. Shibuya, M. Kojima, Hiroshi Nakamura, H. Nasu, Kosuke Yanagidaira, Kiyofumi Sakurai, Yasushi Nagadomi, Kazuaki Kawaguchi, Yasuyuki Kajitani, Kazushige Kanda, Junji Musha, Ryoichi Tachibana, T. Kaneko, Y. L. Koh, Juan Lee, Dai Nakamura
Rok vydání: 2019
Předmět:
Zdroj: ISSCC
Popis: Since 3D-Flash memory took over for 2D-Flash memory, chip capacity has continuously improved [1]–[3]. In the 2D-Flash era, 2b/cell (MLC) offered higher performance and reliability, while a 3b/cell (TLC) offered the lowest cost. Thanks to a larger feature size, 3D Flash cell reliability is much better than that of 2D. As a result, TLC 3D-Flash became the mainstream non-volatile memory, since it satisfies most market requirements in both performance and reliability. To meet the continuously growing market demand for higher capacity and lower cost, a 4b/cell (QLC) 3D-Flash memory in a 96-WL-layer technology is presented. It achieves an 8.5Gb/mm2 area capacity, which is $42 \sim 50$% greater than the 3D-Flash memory reported in [2], [3]. A chip micrograph and a table summarizing key features is shown in Fig. 13.1.7. The total 1.33Tb capacity is the highest single Flash memory chip capacity reported thus far.
Databáze: OpenAIRE