| Popis: |
CMOS compatible avalanche photodiodes (CMOS APDs) can be fabricated with standard CMOS technology, which make CMOS APDs are considered as a key optoelectronic device for optical communication systems and optical wireless communication systems. The guard-ring (GR) structure in CMOS APDs can alleviate the premature edge breakdown (PEB) effects and greatly improve the device performance. In this paper, the influence of various type GR structure on CMOS APDs performance are discussed, and its important applications in radio-over-fibre (RoF) are reviewed. |
