Tunnelling Assisted Noise Control in InAs/InAs0.88Sb0.12Read Avalanche Diode

Autor:	S K Nayak, G N Dash, Jibitesh Mishra
Rok vydání:	1999
Předmět:	Materials science Avalanche diode business.industry Measure (physics) Electrical engineering Noise (electronics) Single-photon avalanche diode Noise control Optoelectronics Electrical and Electronic Engineering business Quantum tunnelling Voltage Diode
Zdroj:	IETE Technical Review. 16:243-248
ISSN:	0974-5971 0256-4602
DOI:	10.1080/02564602.1999.11416836
Popis:	Analytical expressions for the mean-square noise voltage and noise measure of a Read-type avalanche diode in mixed mode operation are derived which reveal some new features of noise generation in MITATT (mixed tunnelling avalanche transit time) devices. These expressions have been used to explore the potential of InAs/InAs0.88 Sb0.12 for a low-noise MITATT diode. Our results indicate the lowest noise measure of 10.9dB from In As/In As0.88 Sb0.12 Read type MITATT with 32% tunnelling current as against the value of 19.26 dB from a similar Si diode structure.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3934894f2f43f98c084ae75fe3e7b7fe https://doi.org/10.1080/02564602.1999.11416836 Zobrazit plný text záznamu