A carbonaceous thin film made by CVD and its application for a carbon/n-type silicon (C/n-Si) photovoltaic cell

Autor: S. Yoshimura, Yoshitomo Sasaki, H.A. Yu, T. Kaneko, S. Otani
Rok vydání: 1998
Předmět:
Zdroj: Carbon. 36:137-143
ISSN: 0008-6223
DOI: 10.1016/s0008-6223(97)00170-x
Popis: Carbon materials have found many applications in chemical, mechanical, biological—medical, and electrical fields because of their superior properties. However, the carbon materials have not been used as yet as electronic materials in microelectronic devices. Carbon materials heat treated at lower temperatures show many of the characteristics of semiconductors [1]. Amorphous carbonaceous thin films, which can be made by a chemical vapor deposition (CVD) method at low temperature, show a certain degree of transparency and good electrical conductivity [2]. These properties suggest that carbon materials might be utilized as materials for electronic devices, such as a photovoltaic cell.
Databáze: OpenAIRE