Thermal oxidation of tantalum silicide in O2and H2O

Autor:	John F. Moulder, Ronald S. Nowicki, Krishna C. Saraswat
Rok vydání:	1982
Předmět:	Thermal oxidation Argon Materials science Physics and Astronomy (miscellaneous) Silicon Annealing (metallurgy) Metallurgy Tantalum chemistry.chemical_element complex mixtures law.invention chemistry.chemical_compound chemistry Chemical engineering law Sputtering Silicide Crystallization
Zdroj:	Applied Physics Letters. 41:1127-1129
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.93424
Popis:	Thermal oxidation of TaSi2 in dry oxygen and steam has been investigated. 0.3‐μm‐thick films of tantalum silicide were deposited by cosputtering on high resistivity 〈111〉 silicon and oxidized silicon wafers. After a crystallization anneal in argon, the films were oxidized in dry O2 or steam at 1000 and 1100 °C. In all cases oxidation was observed. For TaSi2 deposited on Si, only the growth of SiO2 was observed, indicating that the Si diffused through TaSi2 before oxidation, and TaSi2 remained intact. In the case where TaSi2 was deposited on SiO2, it was actively involved in the oxidation process, resulting in the formation of SiO2 and Ta2O5.
Databáze:	OpenAIRE
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