Quantum-mechanical effects on the carrier distribution around a semiconductorp-njunction
| Autor: | P. Agarwal, G. A. M. Hurkx |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Physics
Condensed matter physics business.industry Doping Semiclassical physics Orders of magnitude (numbers) Condensed Matter Physics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Semiconductor Depletion region Condensed Matter::Superconductivity Product (mathematics) business p–n junction Diode |
| Zdroj: | Physical Review B. 73 |
| ISSN: | 1550-235X 1098-0121 |
| DOI: | 10.1103/physrevb.73.233309 |
| Popis: | The formation of the depletion layer around a semiconductor $p$-$n$ junction is calculated quantum mechanically. For doping concentrations below $\ensuremath{\sim}{10}^{18}\phantom{\rule{0.3em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$ we recover the familiar semiclassical result. However, for higher doping concentrations strong deviations are found. For instance, the $p$-$n$ product deviates by orders of magnitude from the semiclassical result, invalidating Shockley's boundary conditions in highly doped junctions. Our calculations are consistent with measurements of the excess current in highly doped silicon diodes. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|