Low Energy Proton Irradiation Effects on Commercial Enhancement Mode GaN HEMTs
| Autor: | Daniel M. Fleetwood, Jun Xu, T. P. Ma, Michael W. McCurdy, En Xia Zhang, Xin Wan, Oliver Keith Baker, Max Zafrani, Han Liang Bo, Simon P. Wainwright, Robert A. Reed |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Nuclear and High Energy Physics Materials science Proton 010308 nuclear & particles physics business.industry Doping Gallium nitride High voltage Electron 01 natural sciences Threshold voltage chemistry.chemical_compound Nuclear Energy and Engineering chemistry 0103 physical sciences Optoelectronics Charge carrier Irradiation Electrical and Electronic Engineering Atomic physics business |
| Zdroj: | IEEE Transactions on Nuclear Science. 64:253-257 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2016.2621065 |
| Popis: | Commercial enhancement mode GaN HEMTs are irradiated with low energy protons under different bias conditions. Negative threshold voltage ( $V_{th}$ ) shifts are observed. In contrast, $V_{th}$ shifts are positive under high voltage stress without proton irradiation. $C$ - $V$ measurements with floating terminals are performed before and after irradiation. Both $I$ - $V$ and $C$ - $V$ results show that a significant density of charged donor-like traps is introduced into these devices by low energy proton irradiation. These defects trap electrons, scatter charge carriers, and/or, in these enhancement mode devices, partially compensate the p-type doping in the p-GaN layer, thereby leading to the observed negative $V_{th}$ shifts and $G_{m}$ degradation. The floating terminal C-V measurements that are introduced in this study appear to be quite sensitive to traps in the AlGaN buffer layer, making this a potentially useful technique for future device characterization. |
| Databáze: | OpenAIRE |
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