AlInGaN/GaN HEMTs with Different GaN Cap Layer on Low Resistivity Silicon Substrate

Autor:	Hui-Yu Chen, Po-Tsung Tu, Po-Chun Yeh, Pei-Jer Tzeng, Shyh-Shyuan Sheu, Chih-I Wu, Indraneel Sanyal, Jen-Inn Chyi
Rok vydání:	2022
Zdroj:	2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3903e90a89f208f8ed16d6b008a86fc0 https://doi.org/10.1109/vlsi-tsa54299.2022.9771040 Zobrazit plný text záznamu