Se Profiles in CST Films Formed by Annealing CdTe/CdSe Bi-Layers
| Autor: | Chris Ferekides, Vasilios Palekis, Ali Abbas, Michael Walls, Shamara Collins, Chih An Hsu |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Photoluminescence Annealing (metallurgy) Bilayer Alloy Analytical chemistry 02 engineering and technology engineering.material 021001 nanoscience & nanotechnology 01 natural sciences Layer thickness Cadmium telluride photovoltaics Transmission electron microscopy 0103 physical sciences engineering 0210 nano-technology Grain structure |
| Zdroj: | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). |
| DOI: | 10.1109/pvsc.2018.8547402 |
| Popis: | Se profiles in CST (CdSeXTe1-X) films formed by annealing CdTe/CdSe bilayers has been studied using transmission electron microscopy (TEM) and photoluminescence (PL). The effect of CdSe layer thickness and CdCl 2 annealing conditions on the alloy layer were investigated. The CdSe thickness was varied from 75 to 1,500 A. All“thick” films (CdSe A300 A) exhibited smaller grain structure at the interface compared to the “thin ” films (CdSe 75-30 A), which exhibited large columnar grains that extended through the CST/CdTe film thickness. The alloy layer for “thick ”CdSe films appeared as a bilayer with two CST compositions: Se-rich and Te-rich. Photoluminescence measurements revealed Se related defects in the films with thicker CdSe (1,000 and 1,500 A). The Se compositional profile was found to be greatly dependent on the CdSe thickness and CdCl 2 heat treatment conditions. The formation of voids at the interface for large CdSe thicknesses suggests that this approach may be only suitable for the formation of relatively low Se content CST films. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|