Ge/Ag(111): SURFACE ALLOY OF A SEMICONDUCTOR ON A METAL
| Autor: | H. OUGHADDOU, B. AUFRAY, J. M. GAY |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Diffraction
Auger electron spectroscopy Materials science business.industry Alloy chemistry.chemical_element Germanium Surfaces and Interfaces engineering.material Condensed Matter Physics Surfaces Coatings and Films Crystallography Semiconductor chemistry Monolayer Materials Chemistry engineering business Dissolution Superstructure (condensed matter) |
| Zdroj: | Surface Review and Letters. :929-934 |
| ISSN: | 1793-6667 0218-625X |
| Popis: | We present one of the first experimental studies of the formation of an ordered surface alloy of a semiconductor, Ge, and a metal, Ag, with bulk tendency to phase separation. The kinetics of growth at room temperature as well as the surface segregation of Ge have been investigated for the (111) orientation using Auger Electron Spectroscopy (AES) and Low Electron Energy Diffraction (LEED). The growth mode of Ge on Ag(111) is layer-by-layer like up to at least two layers. An unexpected ordered surface alloy forming a [Formula: see text] superstructure is observed during the growth at 1/3 germanium monolayer, followed by a p(7× 7) superstructure at one-monolayer coverage. The surface Ge segregation studied via both dissolution and segregation kinetics shows the particular stability of the ordered [Formula: see text] surface alloy. |
| Databáze: | OpenAIRE |
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