Thermal EMF in film resistors under focused semiconductor laser irradiation

Autor:	V A Alexandrov, V V Besogonov
Rok vydání:	2019
Předmět:	Materials science Semiconductor Physics::Instrumentation and Detectors business.industry law Thermal Physics::Physics Education Optoelectronics Irradiation Resistor business Laser law.invention
Zdroj:	IOP Conference Series: Materials Science and Engineering. 560:012099
ISSN:	1757-899X 1757-8981
DOI:	10.1088/1757-899x/560/1/012099
Popis:	The work studies thermal EMF generation in thick-film and thin-film resistors under focused semiconductor laser irradiation. The thermal EMF in film resistors is maximum in the case of laser irradiation of the boundaries of the resistant film contact with electrodes. The signal sign depends on the polarity of resistors brought into the measurement circuit, location of the laser spot on the boundaries of the resistive film contacts with electrodes and on the edges of nonuniformities. Thermal EMF includes direct and pulsed components during local irradiation of the surface of resistors by periodic laser pulses. The frequency and duration of the edge of unipolar EMF pulses on the electrodes of the resistors are equal to the frequency and duration of the laser pulses, respectively. In silver-palladium thick-film resistors, the maximum of the thermal EMF signal can be used to determine the boundaries of the surface section with palladium reduced by hydrogen.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::38ef5ec34ef7d5b8234c57aae255caca https://doi.org/10.1088/1757-899x/560/1/012099 Zobrazit plný text záznamu