Current transport in CuInS 2 :Ga/Cds/Zno – solar cells
| Autor: | I. Hengel, M.Ch. Lux-Steiner, A. Neisser, R. Klenk |
|---|---|
| Rok vydání: | 2000 |
| Předmět: |
business.industry
Band gap Open-circuit voltage Inorganic chemistry Metals and Alloys Surfaces and Interfaces Activation energy Cadmium sulfide Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Tunnel effect chemistry law Solar cell Materials Chemistry Optoelectronics business Quantum tunnelling Recombination |
| Zdroj: | Thin Solid Films. :458-462 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/s0040-6090(99)00841-x |
| Popis: | Beneficial effects of Ga on solar cell performance, e.g. open circuit voltage (Voc>800 mV) in CuInS2 (CIS) thin film solar cells have been observed. These highly efficient cells were used for fundamental investigations on the recombination mechanism. It could be shown that the incorporation of small amounts of Ga does not change the recombination mechanism as such. CIS-based solar cells exhibit a change from tunnelling into interface states in the dark to a thermally activated process under illumination. However, Voc extrapolates to a value below the bandgap energy (Eg) of the CIS. For the latter process a model is proposed in which dominant recombination occurs at the interface and Voc is limited due to the non-ideal band alignment in CuInS2/CdS junctions. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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