Hall effect in La1.85Sr0.15Cu1−xVxO4+δ system

Autor:	Z. X. Zhao, Guang-Can Che, Lihua Liu
Rok vydání:	2003
Předmět:	Oxide ceramics Materials science Charge-carrier density Hall effect Doping Analytical chemistry Electrical and Electronic Engineering Condensed Matter Physics Electronic Optical and Magnetic Materials
Zdroj:	Physica B: Condensed Matter. 339:101-104
ISSN:	0921-4526
DOI:	10.1016/j.physb.2003.08.118
Popis:	The Hall effect has been measured in the V-doped La1.85Sr0.15Cu1−xVxO4+δ system for the temperature 50–300 K. In all samples 1/RH varies linearly with temperature. Carrier density decreases as the V content x increases in a 1/x manner. T c ∗ (=T c /T c max ) decreases with the increase of V content and can be roughly described as T c * = 1−C((1/R H ) opt −(1/R H )) 4 .
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::38e9ca8ceec0a8cb16ff6dc4064ffb66 https://doi.org/10.1016/j.physb.2003.08.118 Zobrazit plný text záznamu Full Text from ScienceDirect