Internal quantum efficiency measurements in InAs/GaSb superlattices for midinfrared emitters
| Autor: | J. T. Olesberg, John P. Prineas, Aaron J. Muhowski, A. M. Muellerleile |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Photoluminescence Condensed Matter::Other business.industry Infrared Superlattice General Physics and Astronomy 02 engineering and technology Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology 01 natural sciences Condensed Matter::Materials Science 0103 physical sciences Radiance Optoelectronics Quantum efficiency 0210 nano-technology business Quantum Excitation Diode |
| Zdroj: | Journal of Applied Physics. 126:243101 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | The internal quantum efficiency of a series of InAs/GaSb superlattices was investigated as a function of carrier generation rate through variable excitation, quasicontinuous-wave photoluminescence measurements. GaSb thicknesses were varied to maximize the internal quantum efficiency for midwave infrared emission. Internal quantum efficiencies were determined from measurements of the photoluminescence radiance and extraction efficiencies computed within a two-slab model. The peak internal quantum efficiencies varied from 15% to 29% at 77 K, which is in good agreement with expectations from InAs/GaSb superlattice light-emitting diode performance. |
| Databáze: | OpenAIRE |
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