Modeling of electrical characteristics of midwave type II InAs∕GaSb strain layer superlattice diodes

Autor:	Vishnu Gopal, Lorenzo Faraone, Colin E. Jones, Jean-Baptiste Rodriguez, Elena Plis, Sanjay Krishna
Rok vydání:	2008
Předmět:	Materials science business.industry Band gap Superlattice General Physics and Astronomy Optoelectronics business Thermal diffusivity Layer (electronics) Ohmic contact Polarity (mutual inductance) Dark current Diode
Zdroj:	Journal of Applied Physics. 104:124506
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.3042232
Popis:	This paper reports the results of modeling of electrical characteristics of midinfrared type II InAs∕GaSb strain layer superlattice (SLS) diode with p-on-n polarity. Bulk based model with the effective band gap of SLS material has been used in modeling of the experimental data. Temperature dependence of zero-bias resistance area product (R0A) and bias dependent dynamic resistance of the diode have been analyzed in detail to investigate dark current contributing mechanisms that are limiting the electrical performance of the diode. R0A of the diode is found to be limited by thermal diffusion currents at higher temperatures and Ohmic shunt resistance contribution limits it at low temperatures ∼82K.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::38d97b447296444b6aed36675271db34 https://doi.org/10.1063/1.3042232 Zobrazit plný text záznamu