Reactions of interstitial carbon with impurities in silicon particle detectors

Autor:	Leonid Makarenko, Michael Moll, F.P. Korshunov, S.B. Lastovski
Rok vydání:	2007
Předmět:	Materials science Deep-level transient spectroscopy Silicon Annealing (metallurgy) Radiochemistry Detector General Physics and Astronomy chemistry.chemical_element Electron Molecular physics Particle detector chemistry Impurity Irradiation
Zdroj:	Journal of Applied Physics. 101:113537
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.2745328
Popis:	We present deep level transient spectroscopy (DLTS) data measured on very high resistivity n-type float-zone silicon detectors after irradiation with 6MeV electrons. The carbon interstitial annealing kinetics is investigated as a function of depth in the detector structure and related to the inhomogeneous depth distribution of oxygen and carbon impurities in the devices. We compare our results with data published in previous works and point out some possible misinterpretation of DLTS data due to detector processing induced inhomogeneous distribution of impurities. Finally, we present a method to determine the absolute concentration of the oxygen and carbon impurities as functions of depth in devices by carefully analyzing the carbon interstitital annealing kinetics.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::38d7b88c07fd96e223074aeaf387bd4c https://doi.org/10.1063/1.2745328 Zobrazit plný text záznamu