Optimization and upscaling of spin coating with organosilane monolayers for low-k pore sealing
| Autor: | Johan Meersschaut, Inge Vaesen, Juergen Boemmels, Yiting Sun, Ainhoa Romo Negreira, Mansour Moinpour, Thierry Conard, Herbert Struyf, Steven De Feyter, I. Hoflijk, Zsolt Tokei, Silvia Armini |
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| Rok vydání: | 2017 |
| Předmět: |
Spin coating
Materials science Nanotechnology Self-assembled monolayer 02 engineering and technology Chemical vapor deposition 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Rutherford backscattering spectrometry 01 natural sciences Atomic and Molecular Physics and Optics 0104 chemical sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials Atomic layer deposition Chemical engineering Physical vapor deposition Monolayer Electrical and Electronic Engineering 0210 nano-technology Layer (electronics) |
| Zdroj: | Microelectronic Engineering. 167:32-36 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2016.10.011 |
| Popis: | For porous low-k film to be integrated into the next generation of interconnects, the pores need to be sealed against metal ions and barrier precursors. Self-assembled monolayers (SAMs) from organosilane precursor are spin coated onto 300mmk=2.2 low-k wafers. Two solvents, propylene glycol monomethyl ether acetate (PGMEA) and methanol with different dielectric constant of 8.3 and 20.1, are evaluated in terms of SAMs layer quality and sealing efficiency at coupon level. SAMs deposited from PGMEA show better sealing than SAMs deposited from methanol and therefore are selected for upscaling. Full wafer spin coating results show that a concentration of 0.05mM or below results in a partial coverage and a tilt angle as high as 70° from the backbone to the normal. Aggregation is observed for all tested concentrations and is worse for higher concentrations, which is possibly induced by the non-negligible presence of water in PGMEA solvents. In order to test the sealing efficiency of the SAMs layer against metal barrier precursors, MnN films by chemical vapor deposition (CVD) and TaNx/Ta (TNT) films by physical vapor deposition (PVD) are deposited on SAM coated low-k wafers. HfO2 is also deposited by Atomic layer deposition (ALD), which is not considered as a barrier but to test the sealing against ALD precursors. Depth profiling Rutherford Backscattering Spectrometry (RBS) measurements indicate an effective sealing of SAMs against CVD and ALD precursors but not against PVD barrier. Display Omitted SAMs are spin coated onto 300mm low-k wafers. After SAMs deposition, źk is 0.1 and decreases to 0.03 after annealing.Solvent dielectric constant affect the pre-condensation of SAMs and therefore sealing.RBS measurements shows that SAMs seal against MnN by CVD but not TNT by PVD. |
| Databáze: | OpenAIRE |
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