Double-dielectric-mirror InGaN/GaN microcavities formed using selective removal of an AlInN layer

Autor:	Francesco Rizzi, K. Bejtka, Martin D. Dawson, Erdan Gu, Ian Watson, Robert W. Martin, Paul R. Edwards, Fabrice Semond
Rok vydání:	2007
Předmět:	Fabrication Materials science Photoluminescence business.industry Cathodoluminescence Substrate (electronics) Condensed Matter Physics Dielectric mirror Optoelectronics General Materials Science Cubic zirconia Electrical and Electronic Engineering business Layer (electronics) Quantum well
Zdroj:	Superlattices and Microstructures. 41:414-418
ISSN:	0749-6036
Popis:	We describe the fabrication and optical properties of a 3 λ / 2 InGaN/GaN-based microcavity using “upper” and “lower” silica/zirconia mirrors. The fabrication of this structure involved selective removal of an AlInN layer following multistep thinning of a free-standing GaN substrate. Photoluminescence spectra show a narrowing of the excitonic emission from InGaN/GaN quantum wells in the microcavity, giving a cavity quality factor Q exceeding 400.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::38d13c0484b32c38cdec466bc8c78194 https://doi.org/10.1016/j.spmi.2007.03.031 Zobrazit plný text záznamu Full Text from ScienceDirect