Testing of a Prototype Detector of Heavy Charged Particles Based on Diamond Epitaxial Films Obtained by Gas-Phase Deposition
| Autor: | Yu.N. Glybin, N. V. Kornilov, S. A. Tarelkin, S. I. Didenko, D. V. Teteruk, Nikolay V. Luparev, A. V. Antipov, S. V. Chernykh, A. V. Chernykh, S.A. Terentiev, N. I. Polushin, A. P. Chubenko, S. Yu. Troschiev, Vladimir Blank |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Silicon 010308 nuclear & particles physics business.industry Schottky barrier Detector Doping chemistry.chemical_element Diamond engineering.material Epitaxy 01 natural sciences Charged particle chemistry Sputtering 0103 physical sciences engineering Optoelectronics business Instrumentation |
| Zdroj: | Instruments and Experimental Techniques. 62:473-479 |
| ISSN: | 1608-3180 0020-4412 |
| Popis: | The results of testing a prototype of a surface-barrier detector of charged particles based on single-crystal epitaxial layers of diamond are presented. Diamond films with p-type conduction with a boron concentration of (4–8) × 1014 cm–3 65 μm thick were grown using gas-phase deposition on heavily doped diamond substrates grown at high pressure and high temperature. A 17 mm2 Schottky barrier was formed by sputtering Pt with a thickness of 30 nm. When irradiated from the 238Pu α-source (the 5.499 keV line) a detector with an external bias of 90 V demonstrated a charge collection efficiency close to 100% and a FWHM high energy resolution of 0.56%. The obtained energy resolution is at the level of standard silicon detectors. |
| Databáze: | OpenAIRE |
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