Small signal modelling approach for submillimeter wave III–V HEMTs with analysation and optimization possibilities
| Autor: | Matthias Seelmann-Eggebert, Arnulf Leuther, Matthias Ohlrogge, Hermann Mabler, Rainer Weber, Axel Tessmann, Oliver Ambacher, Michael Schlechtweg |
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| Rok vydání: | 2016 |
| Předmět: |
Engineering
business.industry 020208 electrical & electronic engineering Bipolar junction transistor Transistor Electrical engineering Multiple-emitter transistor 020206 networking & telecommunications 02 engineering and technology High-electron-mobility transistor law.invention Computer Science::Hardware Architecture Computer Science::Emerging Technologies law Optical transistor Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electronic engineering Equivalent circuit Field-effect transistor business Static induction transistor |
| Zdroj: | 2016 IEEE MTT-S International Microwave Symposium (IMS). |
| DOI: | 10.1109/mwsym.2016.7540043 |
| Popis: | In this paper we present a new small signal multiport modelling approach for III–V High Electron Mobility Transistors (HEMT) that is capable for internal transistor analysation and optimization as well as scaleable in gate width and finger-number. The new model decomposes the planar transistor structure into single multiport elements that are separately described by electrical equivalent circuits and connected to each other over discrete ports. With this new modelling topology we only need to extract a couple of multiport elements to predict the correct behavior for a high amount of different planar transistor structures. This point gives the circuit designer a wide range of possibilities to analyze and optimize a given transistor structure according to special needs, like low-noise, input-output matching or cryogenic behavior on a computer based level. |
| Databáze: | OpenAIRE |
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