Growth of (Ba,Sr)TiO 3 Thin Films by MOCVD: Stoichiometry Effects
| Autor: | Peter Ehrhart, F. Schienle, S. Regnery, H. Juergensen, Rainer Waser, Fotios Fitsilis, M. Schumacher, W. Krumpen |
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| Rok vydání: | 2002 |
| Předmět: |
Permittivity
Molar concentration Materials science Analytical chemistry Condensed Matter Physics Microstructure Electronic Optical and Magnetic Materials Control and Systems Engineering Materials Chemistry Ceramics and Composites Metalorganic vapour phase epitaxy Crystallite Electrical and Electronic Engineering Thin film Stoichiometry Deposition (law) |
| Zdroj: | Integrated Ferroelectrics. 45:59-68 |
| ISSN: | 1607-8489 1058-4587 |
| Popis: | (Ba x Sr 1 m x )TiO 3 thin films were deposited in a planetary multi-wafer MOCVD reactor combined with a liquid delivery system using 0.35 molar solutions of Ba(thd) 2 and Sr(thd) 2 and a 0.4 molar solution of Ti(O-i-Pr) 2 (thd) 2 . The film growth on Pt-(111) was investigated within a wide parameter field, e.g., the deposition temperature was varied between 560°C and 650°C, which yields films with microstructures ranging from randomly oriented polycrystalline to perfectly (100)-textured columnar structures. Special emphasis is given to film stoichiometry: starting with (Ba 0.7 Sr 0.3 )TiO 3 the Group-II/Ti content was varied from 0.9 to 1.1 and the Ba content was reduced to the limit of pure SrTiO 3 films. The electrical properties of MIM structures were investigated after deposition of Pt top electrodes. The nominal thickness of the films was varied between 5 and 100 nm and permittivity and leakage current both are shown to depend strongly on the film thickness. These dependencies on the film thickness ... |
| Databáze: | OpenAIRE |
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