High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements
| Autor: | L. Pekarek, P. Kacerovský, K. Žďánský, J. Zavadil, O. Prochazkova |
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| Rok vydání: | 2003 |
| Předmět: |
Low temperature photoluminescence
Materials science Photoluminescence Condensed matter physics Deep level Annealing (metallurgy) Binding energy Doping Physics::Optics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Materials Science Impurity Condensed Matter::Superconductivity Condensed Matter::Strongly Correlated Electrons Mn doped |
| Zdroj: | physica status solidi (c). :862-866 |
| ISSN: | 1610-1634 |
| DOI: | 10.1002/pssc.200306224 |
| Popis: | Crystals of intentionally undoped n-type InP and Mn doped p-type InP were grown by the Czochralski technique. The as-grown crystals and those processed by high temperature long time annealing were studied by low temperature photoluminescence and temperature dependent Hall measurements. A new broad band was observed in those undoped InP samples which were converted to semi-insulating state by annealing. Hall measurements on those samples show that the semi-insulating state is caused by deep level defects of the same energy as the binding energy of the Fe impurity. Another new photoluminescence band appeared in the annealed InP doped with Mn, while the concentration of Mn did not change according to both photoluminescence and Hall measurements. |
| Databáze: | OpenAIRE |
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