In-Situ Isotropic and Anisotropic DRIE Sequence for Massive Parallel Multistage Brownian Ratchets

Autor:	Jia Wei, Pasqualina M. Sarro, C.R. de Boer, H.T.M. Pham
Rok vydání:	2007
Předmět:	Plasma etching Materials science Silicon Physics::Instrumentation and Detectors Isotropy chemistry.chemical_element Nanotechnology Isotropic etching Molecular physics Computer Science::Other chemistry Etching (microfabrication) Deep reactive-ion etching Wafer Undercut
Zdroj:	TRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference.
DOI:	10.1109/sensor.2007.4300176
Popis:	In this paper an in-situ isotropic and anisotropic deep reactive ion etching (DRIE) sequence process is presented to obtain a periodic asymmetric variation along the z-axis in pore diameter on silicon wafers, which can act as massively parallel and multiply stacked Brownian ratchets. The etch rates of isotropic and anisotropic etching process depends strongly on the size and the shape of structures. The undercut phenomenon for small size structure (less than 2 mum) is investigated. Exposure into NH3 plasma after etching to smoothen the surface of silicon is discussed as well.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::38881e6fb5e53e88a2331e140fa762c6 https://doi.org/10.1109/sensor.2007.4300176 Zobrazit plný text záznamu