High Dopant Activation of Phosphorus in Strained and Relaxed GeSn by Rapid Thermal Annealing and Microwave Annealing

Autor:	C. W. Liu, Yen Chuang, Jiun-Yun Li, Po-Yuan Chiu, Jia-You Liu, Guang-Li Luo
Rok vydání:	2019
Předmět:	Materials science Dopant chemistry Annealing (metallurgy) business.industry viruses Microwave annealing Optoelectronics chemistry.chemical_element Germanium Dopant Activation Rapid thermal annealing business
Zdroj:	2019 Electron Devices Technology and Manufacturing Conference (EDTM).
Popis:	High dopant (phosphorus) activation of 24% and 27% in strained and relaxed Ge 0.93 Sn 0.07 films are demonstrated by microwave annealing, respectively. The annealing effects on the carrier activation in strained and relaxed GeSn films by RTA and MWA were also investigated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::38794c7a25080e71fbb02c80b28dc619 https://doi.org/10.1109/edtm.2019.8731031 Zobrazit plný text záznamu