The nitrogen–hydrogen–vacancy complex in GaAs

Autor:	P. Rudolph, W. Ulrici, F.M. Kiessling
Rok vydání:	2004
Předmět:	Absorption spectroscopy Hydrogen Hydrogen bond Inorganic chemistry Oxide chemistry.chemical_element Condensed Matter Physics Molecular physics Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Impurity Vacancy defect Molecular vibration Atom
Zdroj:	physica status solidi (b). 241:1281-1285
ISSN:	1521-3951 0370-1972
DOI:	10.1002/pssb.200302005
Popis:	The local vibrational mode absorption lines at 3079.2 and 983.3 cm−1, measured in semi-insulating LEC-grown GaAs, are due to the stretching and wagging mode of one hydrogen bonded to a light impurity atom. The investigation of GaAs grown without boric oxide encapsulant delivers arguments that this impurity atom is nitrogen in the nitrogen-vacancy (NAs–VGa) defect, which is responsible for the vibrational quadruplet line at 638 cm−1. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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