Characterization of annealed oxides on n-type 6HSiC by high- and low-frequency CV-measurements
| Autor: | J. Stein, E. Stein von Kamienski, Heinrich Kurz, A. Gölz |
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| Rok vydání: | 1995 |
| Předmět: |
Materials science
Band gap Oxide Analytical chemistry Charge (physics) Trapping Low frequency Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Characterization (materials science) Stress (mechanics) chemistry.chemical_compound chemistry Positive bias Electrical and Electronic Engineering |
| Zdroj: | Microelectronic Engineering. 28:201-204 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(95)00043-8 |
| Popis: | Electrical properties of Oxides on 6HSiC are extracted from HFCV and QSCV measurements from 24°C to 300°C. Dit values calculated by the Terman and the HF-LF method differ in hight and position with respect to the bandgap. However, both methods result in the same relations for different samples. Negative charge trapping in slow interface states and oxide traps is observed during positive bias stress. The trapping properties of different devices correlate to the initial fixed oxide charge densities. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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