Autor: |
André J. Labelle, Edward H. Sargent, Kyle W. Kemp, Alexander H. Ip, Sjoerd Hoogland, Illan J. Kramer, Susanna M. Thon |
Rok vydání: |
2013 |
Předmět: |
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Zdroj: |
Advanced Energy Materials. 3:917-922 |
ISSN: |
1614-6832 |
DOI: |
10.1002/aenm.201201083 |
Popis: |
Interface recombination was studied in colloidal quantum dot photovoltaics. Optimization of the TiO2-PbS interface culminated in the introduction of a thin ZnO buffer layer deposited with atomic layer deposition. Transient photovoltage measurements indicated a nearly two-fold decrease in the recombination rate around 1 sun operating conditions. Improvement to the recombination rate led to a device architecture with superior open circuit voltage (VOC) and photocurrent extraction. Overall a 10% improvement in device efficiency was achieved with Voc enhancements up to 50 mV being realized. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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