Effect of inert gas additive on Cl2-based inductively coupled plasma etching of NiFe and NiFeCo

Autor:	H. Cho, K. B. Jung, Eric Lambers, Y. D. Park, S. J. Pearton, T. Feng, David C. Hays, Jeffrey R. Childress, Y. B. Hahn
Rok vydání:	1999
Předmět:	Materials science technology industry and agriculture Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Plasma Condensed Matter Physics Surfaces Coatings and Films Ion chemistry Etching (microfabrication) Desorption Chlorine Inductively coupled plasma Thin film Inert gas
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:2223-2227
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.581751
Popis:	NiFe and NiFeCo thin films have been etched in Cl2/He, Cl2/Ar and Cl2/Xe inductively coupled plasmas as a function of pressure, source power, and rf chuck power. The etch rates decrease with increasing pressure, and go through a maximum with both source and chuck power. The results are consistent with a mechanism involving ion-assisted desorption of relatively involatile etch products, and a balance of ion flux, ion energy, and chlorine neutral density is necessary to achieve practical etch rates and smooth surfaces. Under our conditions, Cl2/He provided the best surface morphologies and the least residual chlorine.
Databáze:	OpenAIRE
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