Defect Control in Nitrogen Doped Czochralski Silicon Crystals

Autor:	Y. Tachikawa, Naoya Masahashi, Katsuhiko Nakai, Atsushi Ikari, Wataru Ohashi, Hiroyuki Deai, Shunichi Hayashi, Y. Hideki, Yasumitsu Ohta, Taizo Hoshino
Rok vydání:	1999
Předmět:	Crystallography Materials science Oxygen precipitates chemistry Chemical engineering Silicon chemistry.chemical_element General Materials Science Nitrogen doped Condensed Matter Physics Nitrogen Atomic and Molecular Physics and Optics
Zdroj:	Solid State Phenomena. :161-166
ISSN:	1662-9779
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3847a525677846886052d4663a5fda00 https://doi.org/10.4028/www.scientific.net/ssp.69-70.161 Zobrazit plný text záznamu