Evaluation of Sn-Doped Indium Oxide Film and Interface Properties on a-Si Formed by Reactive Plasma Deposition
| Autor: | Satoshi Yasuno, Hiroki Kanai, Takefumi Kamioka, Yoshio Ohshita, Tappei Nishihara, Atsushi Ogura, Ichiro Hirosawa |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Annealing (metallurgy) business.industry Contact resistance Oxide chemistry.chemical_element Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry X-ray photoelectron spectroscopy law 0103 physical sciences Solar cell Optoelectronics 0210 nano-technology business Layer (electronics) Indium |
| Zdroj: | ECS Journal of Solid State Science and Technology. 8:Q101-Q105 |
| ISSN: | 2162-8777 2162-8769 |
| DOI: | 10.1149/2.0181906jss |
| Popis: | In pursuit for the improvement of heterojunction Si solar cell performance, we evaluated Sn-doped Indium oxide (ITO)/a-Si structure by using conventional and hard X-ray photoelectron spectroscopy (XPS, HAXPES) to identify the cause of solar cell performance degradation. HAXPES allows us to evaluate the SiOx layer at the ITO/a-Si interface non-destructively. The SiOx formation at the ITO/a-Si interface leads to an increase the contact resistance, which can be reduced by post deposition annealing (PDA). In addition, PDA promoted the evaluation of Fermi level, the precipitation of ITO component in a-Si layer, and the increase of interface roughness. Before PDA, the diffusion of Sn atoms in a-Si was observed. Furthermore, it was also confirmed by PDA that Si atoms were diffused to ITO. These reaction at the ITO/a-Si interface may be part of the degradation factor of the Si solar cells. |
| Databáze: | OpenAIRE |
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