Effect of thermal annealing on the structural and mechanical properties of amorphous silicon carbide films prepared by polymer-source chemical vapor deposition

Autor: M. Scarlete, Y. Awad, M. A. El Khakani, N. Camiré, Jaouhar Mouine, D. Brassard, C. Aktik, R. Smirani, M. Lessard
Rok vydání: 2010
Předmět:
Zdroj: Thin Solid Films. 518:2738-2744
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2009.10.154
Popis: We report on the effect of thermal annealing on the structural and mechanical properties of amorphous SiC thin films prepared by means of a polymer-source chemical vapor deposition process. The chemical bondings of the a-SiC:H films were systematically examined by means of Fourier transform infrared spectroscopy (FTIR). The film composition was measured by X-ray photoelectron spectroscopy, while X-ray reflectivity measurements were used to account for the film density variations caused by the post-annealing treatments over the 750–1200 °C range. In addition, their mechanical properties (hardness and Young's modulus) were investigated by using the nano-indentation technique. FTIR measurements revealed that not only the intensity of a-SiC absorption band linearly increases but also its position is found to shift to a higher wave number as a result of annealing. In addition, the bond density of Si―C is found to increase from (101.6–224.5) × 1021 bond·cm− 3 accompanied by a decrease of Si―H bond density from (2.58–0.46)× 1021 bond·cm− 3 as a result of increasing the annealing temperature (Ta) from 750 to 1200 °C. Annealing-induced film densification is confirmed, as the a-SiC film density is found to increase from 2.36 to ∼ 2.75 g/cm− 3 when Ta is raised from 750 to 1200 °C. In addition, as Ta is increased from 750 to 1200 °C, both hardness and Young's modulus are found to increase from 15.5 to 17.6 GPa and 155 to 178 GPa, respectively. Our results confirm the previously established linear correlation between the mechanical properties of the a-SiC films and their bond densities.
Databáze: OpenAIRE
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