Nanoscale Characterization of WSe2 for Opto-electronics Applications
| Autor: | Avra S. Bandyopadhyay, Anupama B. Kaul, Nirmal Adhikari |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Kelvin probe force microscope
Materials science business.industry Mechanical Engineering 02 engineering and technology Chemical vapor deposition 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences law.invention Characterization (materials science) Transition metal Mechanics of Materials law Solar cell Microscopy Optoelectronics General Materials Science 0210 nano-technology business Nanoscopic scale Layer (electronics) |
| Zdroj: | MRS Advances. 2:3715-3720 |
| ISSN: | 2059-8521 |
| DOI: | 10.1557/adv.2017.410 |
| Popis: | Two dimensional (2D) thin transition metal dichalcogenides are being widely investigated for optoelectronics applications. Here, we report on the interfacial study of WSe2 with photo-absorber materials for efficient charge transport using Kelvin Probe Force Microscopy (KPFM) for solar cell applications. The WSe2 in these experiments was synthesized using Chemical Vapor Deposition (CVD) with a WO3 powder and Se pellets as the precursors, where the selenium was placed upstream in an Ar carrier gas within the furnace at a temperature zone of 260-270°C. For the interfacial analysis, nanoscale KPFM measurements show an average surface potential of 125 meV for the CVD synthesized WSe2 flakes. KPFM measurements signify that a thin layer of WSe2 can be used to suppress back recombination of carriers between the electron transport layer (ETL) and the absorber layer. A proper band alignment between ETL and absorber layer helps to increase the overall device performance, which we will elaborate upon in this work. Capacitance-voltage and capacitance-frequency measurements were measured to study the role of defects. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink