Preferentially oriented electron beam deposited TiN thin films using focused jet of nitrogen gas
| Autor: | S. Rajagopalan, R. Ramaseshan, Feby Jose, Sitaram Dash |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Analytical chemistry Evaporation chemistry.chemical_element 02 engineering and technology Surfaces and Interfaces Substrate (electronics) Pole figure Nanoindentation 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Secondary electrons Surfaces Coatings and Films chemistry Residual stress 0103 physical sciences Materials Chemistry Stress relaxation 0210 nano-technology Tin |
| Zdroj: | Surface Engineering. 32:834-839 |
| ISSN: | 1743-2944 0267-0844 |
| DOI: | 10.1080/02670844.2016.1159832 |
| Popis: | A modified electron beam evaporator has been used to synthesise TiN thin films with (111) preferred orientation. This new design involved in creating local plasma by accelerating the secondary electrons emitted from the evaporating ingot by a positively biased semi-cylindrical anode plate (biased activated reactive evaporation). To accelerate the reaction to form TiN, a jet of gas has been focused towards the substrate as a reactive gas. We have observed a preferred orientation (111) with to the surface normal in pole figure analysis. The residual stress by the classical sin technique did not yield any tangible result due to the preferred orientation. The hardness and modulus measured by nanoindentation technique was around 19.5 and 214 GPa. The continuous multicycle indentation test on these films exhibited a stress relaxation. |
| Databáze: | OpenAIRE |
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