Autor: |
Yu Chun Chen, Tien-Yu Hsieh, Hung Wei Li, Ting-Chang Chang, Wan-Fang Chung |
Rok vydání: |
2013 |
Předmět: |
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Zdroj: |
SID Symposium Digest of Technical Papers. 44:1037-1039 |
ISSN: |
0097-966X |
Popis: |
This study presents the influence of photo-thermal pre-treatment on the electrical characteristic and bias-induced instability of amorphous Zn-Sn-O thin film transistors. Even in the vacuum ambient, the passivation-free device with photo-thermal pre-treatment shows more stability after stress than that without pre-treatment. This indicates pre-treatment should be conducted before passivation process. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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