Advantages of Faceted P-Raised Source/Drain in Fully Depleted Silicon on Insulator Technology

Autor:	David Barge, Cyrille Le Royer, Anita Peeva, Thomas Feudel, Jens-Uwe Sachse, Heyne Tobias, Judson R. Holt, Aydin Omur Isil, Timothy J. McArdle, Markus Lenski, Christoph Klein, Laks Vanamurthy, Alexis Divay, Carsten Peters, Mulfinger George R, Elliot John Smith, Dirk Utess, Ralf Gerber, Steffen Lehmann, Sören Jansen
Rok vydání:	2018
Předmět:	Materials science business.industry Optoelectronics Silicon on insulator business
Zdroj:	ECS Transactions. 86:199-206
ISSN:	1938-5862 1938-6737
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::3819cee07309788290de4beede1db09c https://doi.org/10.1149/08607.0199ecst Zobrazit plný text záznamu