Suppression of Bipolar Degradation in Deep-P Encapsulated 4H-SiC Trench MOSFETs up to Ultra-High Current Density
| Autor: | Shuhei Mitani, Junichi Uehara, Masato Noborio, Yuichi Takeuchi, Aiko Ichimura, Yasuhiro Ebihara, Kazuhiro Tsuruta |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry 020208 electrical & electronic engineering 02 engineering and technology 01 natural sciences 0103 physical sciences Trench 0202 electrical engineering electronic engineering information engineering Optoelectronics Degradation (geology) business Current density High current density Diode |
| Zdroj: | 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| DOI: | 10.1109/ispsd.2019.8757567 |
| Popis: | The bipolar degradation of Deep-p encapsulated 4H-SiC trench MOSFETs was investigated by using the pulse-current conduction system up to ultra-high current density. The fabricated MOSFETs exhibit the low hole injection compared with the PN diodes and conventional MOSFETs, resulted in the fabricated MOSFETs suppressed the bipolar degradation up to a current density of 3000 A/cm2. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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