Improved mass-transported GaInP/GaAs lasers

Autor:	D.Z. Tsang, James N. Walpole, S.H. Groves, S. C. Palmateer, Z.L. Liau
Rok vydání:	1990
Předmět:	chemistry.chemical_compound Threshold current Materials science chemistry law business.industry Optical materials Optoelectronics Laser business law.invention Photonic crystal Gallium arsenide
Zdroj:	12th IEEE International Conference on Semiconductor Laser.
DOI:	10.1109/islc.1990.764468
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::380ddb36a1ac16002f0904fb244b8855 https://doi.org/10.1109/islc.1990.764468 Zobrazit plný text záznamu