Insulator-Metal Crossover near Optimal Doping inPr2−xCexCuO4: Anomalous Normal-State Low Temperature Resistivity
Autor: | Richard A. Webb, Patrick Fournier, S. Darzens, E. Maiser, G. Czjzek, Thirumalai Venkatesan, Pritiraj Mohanty, Christopher Lobb, R. L. Greene |
---|---|
Rok vydání: | 1998 |
Předmět: |
Materials science
Condensed matter physics Scattering Transition temperature Doping General Physics and Astronomy Metal Electrical resistivity and conductivity Condensed Matter::Superconductivity visual_art visual_art.visual_art_medium Condensed Matter::Strongly Correlated Electrons Cuprate Thin film Ground state |
Zdroj: | Physical Review Letters. 81:4720-4723 |
ISSN: | 1079-7114 0031-9007 |
DOI: | 10.1103/physrevlett.81.4720 |
Popis: | Normal-state resistivity measurements at high fields and low temperatures in electron-doped ${\mathrm{Pr}}_{2\ensuremath{-}x}{\mathrm{Ce}}_{x}{\mathrm{CuO}}_{4}$ thin films reveal an insulator-metal crossover near a doping level $x\ensuremath{\approx}0.15$, similar to a previous report on hole-doped ${\mathrm{La}}_{2\ensuremath{-}x}{\mathrm{Sr}}_{x}{\mathrm{CuO}}_{4}$. The temperature dependence of the resistivity of insulatinglike samples is sublogarithmic, while for metallic samples (with $x\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}0.17$) the resistivity is linear from 40 mK to 40 K. This surprising latter observation suggests an unusual contribution to the scattering processes at low temperature in these materials. We conclude that the ground state at $x\phantom{\rule{0ex}{0ex}}=\phantom{\rule{0ex}{0ex}}0.15$, corresponding to the maximum transition temperature, is equivalent for hole- and electron-doped cuprates. |
Databáze: | OpenAIRE |
Externí odkaz: |