Advantages of SiGe-pnp over Si-pnp for analog and RF enhanced CBiCMOS and Complementary Bipolar design usage
| Autor: | Jeff A. Babcock, Alan Buchholz, Robert Malone, Mattias Dahlstrom, Marco Corsi, Alexei Sadovnikov, Hiroshi Yasuda, Joel M. Halbert, Jonggook Kim, Greg Cestra |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Engineering 010308 nuclear & particles physics business.industry Transistor Bipolar junction transistor Hardware_PERFORMANCEANDRELIABILITY 01 natural sciences Silicon-germanium law.invention chemistry.chemical_compound Reliability (semiconductor) chemistry law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS Electronic engineering Radio frequency business Hardware_LOGICDESIGN Parametric statistics |
| Zdroj: | 2016 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM). |
| Popis: | The evolution of silicon and silicon-germanium pnp transistors is reviewed in this paper. The motivation for SiGe-pnp transistors in Complementary Bipolar (CBi) and CBiCMOS is discussed with a view on device parametric parameters that help gage the usefulness of these devices in analog and RF design. We review the basic process architectures and process building blocks for CBiCMOS. SiGe-pnp versus Si-pnp performance metrics are highlighted followed by a discussion on circuit blocks that benefit from having near matched complementary bipolar transistors. |
| Databáze: | OpenAIRE |
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