In situ studies of the amorphous to microcrystalline transition of hot-wire chemical vapor deposition Si:H films using real-time spectroscopic ellipsometry
| Autor: | B. P. Nelson, Dean H. Levi, Helio R. Moutinho, J. D. Perkins |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
Silicon Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Substrate (electronics) Chemical vapor deposition Condensed Matter Physics Surfaces Coatings and Films Amorphous solid Crystal symbols.namesake Crystallinity Microcrystalline chemistry symbols Raman spectroscopy |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 21:1545-1549 |
| ISSN: | 1520-8559 0734-2101 |
| Popis: | In situ real-time spectroscopic ellipsometry (RTSE) provides detailed information on the evolution of the structural and optical properties of Si:H films during growth [Collins et al., Appl. Surf. Sci. 154-155, 217 (2000)]. We have used in situ RTSE to characterize the morphology and crystallinity of hot-wire chemical vapor deposition (HWCVD) Si:H films grown on native-oxide covered crystal silicon substrates as a function of substrate temperature Ts, hydrogen dilution R=[H2/SiH4], and film thickness db. Transitions from one mode of film growth to another are correlated with abrupt changes in the magnitude of the surface roughness during film growth. The degree of crystallinity of the film can be determined from the shape of the dielectric spectrum. We have studied the growth parameter space consisting of R from 0 to 14, Ts of 250 and 500 °C, and db from 0 to 1 μm. We have mapped out the crystallinity versus R, Ts, and db based on our analysis of the RTSE data. The transition between a-Si:H and μc-Si:H fo... |
| Databáze: | OpenAIRE |
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