Ultra-high vacuum metalorganic chemical vapor deposition of GaAs thin films onto Si(100) using a single-source precursor
| Autor: | Alex A. Wernberg, Rishi Raj, Jiong-Ping Lu |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Auger electron spectroscopy
Silicon Chemistry Ultra-high vacuum Metals and Alloys Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Substrate (electronics) Chemical vapor deposition Surfaces Coatings and Films Electronic Optical and Magnetic Materials Gallium arsenide chemistry.chemical_compound Carbon film Materials Chemistry Thin film |
| Zdroj: | Thin Solid Films. 205:236-240 |
| ISSN: | 0040-6090 |
| Popis: | Films of gallium arsenide were deposited under ultra-high vacuum (UHV) conditions onto a silicon (100) substrate at 400 °C using a single organometallic precursor containing both Group III and Group V elements. Characterization of the films by Auger electron spectroscopy indicates that carbon is incorporated into the film in the initial stages of film growth and that the films are arsenic-deficient. |
| Databáze: | OpenAIRE |
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