Quantum paraelectricity and induced ferroelectricity by germanium doping of (PbySn1–y)2P2S(Se)6 single crystals
| Autor: | Andrius Džiaugys, Ilona Zamaraitė, Y. U. Vysochanskii, Jūras Banys |
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| Rok vydání: | 2020 |
| Předmět: |
Quantum paraelectricity
Materials science Condensed matter physics Doping General Physics and Astronomy chemistry.chemical_element Germanium 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Ferroelectricity chemistry 0103 physical sciences 010306 general physics 0210 nano-technology |
| Zdroj: | Lithuanian Journal of Physics. 60 |
| ISSN: | 2424-3647 1648-8504 |
| DOI: | 10.3952/physics.v60i2.4227 |
| Popis: | In this paper we report a dielectric study on four single crystals Pb2P2S6, (Pb0.98Ge0.02)2P2S6, (Pb0.7Sn0.3)2P2S6 + 5% Ge and (Pb0.7Sn0.3)2P2Se6 + 5% Ge down to 20 K. A new quantum paraelectric state was reported in the Ge-doped samples at low temperatures. In all of these materials the non-classical T2 temperature dependences of inverse dielectric permittivity were observed. The dielectric constants of Pb2P2S6-based single crystals were measured between 20 and 300 K. The temperature dependences of dielectric permittivity were analysed on the basis of Barrett’s model as a signature of quantum paraelectricity. |
| Databáze: | OpenAIRE |
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