MOCVD Compatible Atomic Layer Deposition Process of Al2O3 on SiC and Graphene/SiC Heterostructures
| Autor: | Christian Koppka, Bernd Hähnlein, Frank Schwierz, Jörg Pezoldt, Sebastian Thiele, Yan Mi, Marco Eckstein, Rui Xu, Yong Lei |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Graphene Mechanical Engineering Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences law.invention Atomic layer deposition chemistry.chemical_compound chemistry Mechanics of Materials law Scientific method 0103 physical sciences Aluminium oxide Optoelectronics Breakdown voltage General Materials Science Metalorganic vapour phase epitaxy 0210 nano-technology business |
| Zdroj: | Materials Science Forum. 924:506-510 |
| ISSN: | 1662-9752 |
| Popis: | Aluminium oxide was deposited on silicon, silicon carbide and epitaxial graphene grown on silicon carbide by atomic layer deposition using a standard MOCVD equipment. The morphology and the electrical properties of the aluminium oxide layers on both substrates were determined and compared to aluminium oxide layers deposited with a standard atomic layer deposition equipment. The high-k material fabricated with the developed MOCVD process show comparable or better properties compared to the standard atomic layer deposition process. |
| Databáze: | OpenAIRE |
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