High-Resolution Thermoreflectance Imaging Investigation of Self-Heating in AlGaN/GaN HEMTs on Si, SiC, and Diamond Substrates
| Autor: | Tatyana I. Feygelson, Peter E. Raad, Assaad El Helou, Pavel L. Komarov, Marko J. Tadjer, Travis J. Anderson, Daniel A. Francis, Bradford B. Pate, Karl D. Hobart |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Thermal resistance Transistor Diamond Gallium nitride High-electron-mobility transistor Conductivity engineering.material 01 natural sciences Temperature measurement Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law 0103 physical sciences engineering Interfacial thermal resistance Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 67:5415-5420 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | Gallium nitride (GaN) high electron-mobility transistors (HEMTs) offer considerable high-power operation but suffer in reliability due to potentially damaging self-heating. In this study, self-heating in AlGaN/GaN HEMTs on high conductivity substrates is assessed using a high-resolution thermoreflectance (TR) imaging technique, to compare the thermal response between GaN-on-Si, GaN-on-Diamond, and GaN-on-4H-SiC. The TR method accuracy at high-power density is verified using a nonlinear coefficient of TR ( ${C}_{\text {TR}}$ ) as a function of temperature. The acquired steady-state thermal maps give a thermal resistance of $11.5~\text {mm} \cdot \text {K/W}$ for GaN-on-Si (based on peak channel temperature), compared to 2.7 and $3.3~\text {mm} \cdot \text {K/W}$ for GaN-on-SiC and GaN-on-diamond substrates, respectively. The tested GaN-on-diamond HEMT exhibits similar heating rates to those seen on a SiC substrate, with a slightly higher peak temperature, which indicates a higher thermal boundary resistance that could offset the benefits of using a higher conductivity substrate and lead to faster thermally enhanced degradation. The analysis reveals the importance using high-resolution imaging to detect hotspots and areas of peak temperature that largely affect failure initiation and device reliability and which may not be otherwise observable. |
| Databáze: | OpenAIRE |
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